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HAF2011(L), HAF2011(S)
Silicon N Channel MOS FET Series Power Switching
REJ03G1138-0500 Rev.5.00 Aug 21, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
* * * * Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4 1. Gate 2. Drain 3. Source 4. Drain 2 3
1
1 2 3
D
G
Gate Resistor
Temperature Sensing Circuit
Latch Circuit
Gate Shutdown Circuit
S
REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 1 of 8
HAF2011(L), HAF2011(S)
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VDSS VGSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 60 16 -2.5 40 80 40 50 150 -55 to +150 Unit V V V A A A W C C
Typical Operation Characteristics
(Ta = 25C)
Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH (sd) 1 IIH (sd) 2 Tsd VOP Min 3.5 -- -- -- -- -- -- -- 3.5 Typ -- -- -- -- -- 0.8 0.35 175 -- Max -- 1.2 100 50 1 -- -- -- 12 Unit V V A A A mA mA C V Test Conditions
Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature
REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 2 of 8
HAF2011(L), HAF2011(S)
Electrical Characteristics
(Ta = 25C)
Item Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol ID1 ID2 V (BR) DSS V (BR) GSS V (BR) GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS (op) 1 IGS (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss td (on) tr td (off) tf VDF trr tos1 Min 15 -- 60 16 -2.5 -- -- -- -- -- -- -- 1.0 -- -- 8 -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- 0.8 0.35 -- -- 25 15 16 940 10.7 66 15.5 19 1 200 1 Max -- 10 -- -- -- 100 50 1 -100 -- -- 10 2.25 33 20 -- -- -- -- -- -- -- -- -- Unit A mA V V V A A A A mA mA A V m m S pF s s s s V ns ms Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 IG = 300 A, VDS = 0 IG = -100 A, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = -2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 4 V Note 3 ID = 20 A, VGS = 10 V Note 3 ID = 20 A, VDS = 10 V Note 3 VDS = 10 V, VGS = 0 f = 1 MHz ID = 20 A VGS = 5 V RL = 1.5 IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/dt = 50 A/s VGS = 5 V, VDD = 16 V
Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down operation time Note4
Notes: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition.
REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 3 of 8
HAF2011(L), HAF2011(S)
Main Characteristics
Power vs. Temperature Derating
80
500
Maximum Safe Operation Area
Thermal shut down 200 Operation area
Pch (W)
ID (A)
60
100 50 20 10 5
DC Op
PW
1
10
m
Channel Dissipation
0
s
Drain Current
40
er
=
s
at
10
20
Operation in this area is 2 limited by R DS (on) 1
ion
m
(T
s
c=
25
C )
0 0 50 100 150 200
0.5 Ta = 25C 0.3 0.3 0.5 1 2
5
10
20
50 100
Case Temperature
Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100
10 V
Typical Transfer Characteristics
50
ID (A)
ID (A)
80
8V 6V 5V
Pulse Test
40
Tc = -25C 25C
60
Drain Current
Drain Current
4V
30
75C
20
40
VGS = 3.5 V
20
10 VDS = 10 V Pulse Test
0 0 2 4 6 8 10
0 0 1 2 3 4 5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
0.5
Pulse Test
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS (on) (m)
50
VGS = 4 V
0.4 ID = 20 A 0.3
20 10 5
10 V
0.2 10 A 0.1 5A
2
Pulse Test
0 0 2 4 6 8 10
1 1 2 5 10 20 50 100 200
Gate to Source Voltage VGS (V)
Drain Current
ID (A)
REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 4 of 8
HAF2011(L), HAF2011(S)
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
0.10 Pulse Test 100 50 Tc = -25C 20 10 5 75C 25C
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
VDS = 10 V Pulse Test
0.08
0.06 ID = 20 A 0.04 VGS = 4 V
5 A, 10 A
0.02 5 A, 10 A 10 V 0 -40 0 40 80
ID = 20 A
2 1 0.5
120
160
1
2
5
10
20
50
Case Temperature
Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
1000 500 1000 500
Switching Characteristics
VGS = 5 V, VDD = 30 V PW = 300 s, duty 1 %
Switching Time t (s)
200 100 50 di / dt = 50 A / s VGS = 0, Ta = 25C 1 2 5 10 20 50
200 100 tr 50 tf td(on) 10 0.5 1 2 5 td(off) 10 20 50
20 10 0.5
20
Reverse Drain Current
IDR (A)
Drain Current
ID (A)
Reverse Drain Current vs. Source to Drain Voltage
50 10000 Pulse Test 3000 1000 300 100 30 10 0 0.4 0.8 1.2 1.6 2.0 0
Typical Capacitance vs. Drain to Source Voltage
Reverse Drain Current IDR (A)
VGS = 5 V 30 0V 20
Capacitance C (pF)
40
Coss
10
VGS = 0 f = 1 MHz 10 20 30 40 50
0
Source to Drain Voltage VSD (V)
Drain to Source Voltage VDS (V)
REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 5 of 8
HAF2011(L), HAF2011(S)
Gate to Source Voltage vs. Shutdown Time of Load-Short Test
VGS (V)
12 10 8 6 16 V 4 2 0 0.1 VDD = 9 V
Shutdown Case Temperature vs. Gate to Source Voltage
Shutdown Case Temperature Tc (C)
200
180
Gate to Source Voltage
160
140
120 ID = 5 A 100 0 2 4 6 8 10
1
10
100
Shutdown Time of Load-Short Test PW (mS)
Gate to Source Voltage
VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1 0.1
0.05
ch - c (t) = s (t) * ch - c ch - c = 2.5C/W, Tc = 25C PDM
tp uls e
0.03
0.02 1 0.0
1 o sh
D= PW T
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (S) Switching Time Test Circuit Waveform
Vin Monitor D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 5V
50
VDD = 30 V td(on)
90% tr
90% td(off) tf
REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 6 of 8
HAF2011(L), HAF2011(S)
Package Dimensions
Package Name LDPAK(L) JEITA Package Code RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g
Unit: mm
(1.4)
4.44 0.2 10.2 0.3 1.3 0.15
11.3 0.5 0.3 10.0 + 0.5 -
8.6 0.3
1.3 0.2 1.37 0.2
0.76 0.1 2.54 0.5 2.54 0.5
11.0 0.5
0.2 0.86 + 0.1 -
2.49 0.2
0.4 0.1
Package Name LDPAK(S)-(1)
JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 7 of 8
1.7
1.3 0.15
7.8 6.6
HAF2011(L), HAF2011(S)
Ordering Information
Part No. HAF2011-90L HAF2011-90S HAF2011-90STL HAF2011-90STR Quantity Max: 50 pcs/sack Max: 50 pcs/sack 1000 pcs/Reel 1000 pcs/Reel Shipping Container Sack Sack Embossed tape Embossed tape
REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 8 of 8
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